Samsung today announced what it says is the first 10nm 8 Gb LPDDR5 DRAM module for mobile devices. The new memory chip can push data at 6,400 Mbps, or 50% faster than current chips. The DRAM module can operate in two bandwidths to aid in compatibility with circuit designs. The module makes its gains by doubling the number of memory bank subdivisions from eight to 16, which lets it run faster while also using 30% less power. Samsung claims the 10nm 8 Gb LPDDR5 DRAM module will assist with mobile artificial intelligence and 5G applications. The company has finalized testing of the chip and will begin manufacturing it in its home market of Korea for devices as needed.


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